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NXP Semiconductors 
PBRN123ES,126的详细信息
| Datasheets： | |
|---|---|
| PBRN123E Series： | |
| Product Photos： | |
| TO-92-3(StandardBody),TO-226_straightlead： | |
| Standard Package ： | 2,000 |
| Category： | Discrete Semiconductor Products |
| Family： | Transistors (BJT) - Single, Pre-Biased |
| Series： | - |
| Packaging ： | Tape & Box (TB) |
| Transistor Type： | NPN - Pre-Biased |
| Current - Collector (Ic) (Max)： | 800mA |
| Voltage - Collector Emitter Breakdown (Max)： | 40V |
| Resistor - Base (R1) (Ohms)： | 2.2k |
| Resistor - Emitter Base (R2) (Ohms)： | 2.2k |
| DC Current Gain (hFE) (Min) @ Ic, Vce： | 280 @ 300mA, 5V |
| Vce Saturation (Max) @ Ib, Ic： | 1.15V @ 8mA, 800mA |
| Current - Collector Cutoff (Max)： | 500nA |
| Frequency - Transition： | - |
| Power - Max： | 700mW |
| Mounting Type： | Through Hole |
| Package / Case： | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Supplier Device Package： | TO-92-3 |
| Other Names： | 934059134126PBRN123ES AMOPBRN123ES AMO-ND |
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