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NX3008NBKV,115的详细信息
Manufacturer: | NXP |
---|---|
Product Category: | MOSFET |
RoHS: | Yes |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 30 V |
Vgs - Gate-Source Breakdown Voltage: | 8 V |
Id - Continuous Drain Current: | 400 mA |
Rds On - Drain-Source Resistance: | 1 Ohms |
Configuration: | Dual |
Qg - Gate Charge: | 0.52 nC |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 390 mW |
Mounting Style: | SMD/SMT |
Package / Case: | SOT-666-6 |
Packaging: | Reel |
Brand: | NXP Semiconductors |
Forward Transconductance - Min: | 310 mS |
Minimum Operating Temperature: | - 55 C |
Factory Pack Quantity: | 4000 |
NX3008NBKV,115相关文档
- S-parameter: NX3008NBKV.01_02_2012 Spice parameter (v.1.0)
- Selection guide: NXP's Power MOSFET Selection Guide 2012; Smaller, faster, cooler (v.2.1)
- Line card: Broad small-signal MOSFET portfolio to suit a wide range of applications (v.2.0)
- Application note: Understanding Power MOSFET Datasheet Parameters (v.1.0)
- PCN: Customer Information Notification
- PCN: Customer Information Notification
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