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NVF2955T1G的详细信息
Manufacturer: | ON Semiconductor |
---|---|
Product Category: | MOSFET |
RoHS: | Yes |
Transistor Polarity: | P-Channel |
Vds - Drain-Source Breakdown Voltage: | - 60 V |
Vgs - Gate-Source Breakdown Voltage: | 20 V |
Id - Continuous Drain Current: | - 2.6 A |
Rds On - Drain-Source Resistance: | 154 mOhms |
Configuration: | Single Dual Drain |
Vgs th - Gate-Source Threshold Voltage: | - 4 V |
Qg - Gate Charge: | 14.3 nC |
Maximum Operating Temperature: | + 175 C |
Pd - Power Dissipation: | 2.3 W |
Mounting Style: | SMD/SMT |
Package / Case: | SOT-223-3 |
Packaging: | Reel |
Brand: | ON Semiconductor |
Ciss - Input Capacitance: | 492 pF |
Fall Time: | 38 ns |
Forward Transconductance - Min: | 1.77 S |
Minimum Operating Temperature: | - 55 C |
Rise Time: | 7.6 ns |
Series: | NTF2955 |
Factory Pack Quantity: | 1000 |
Typical Turn-Off Delay Time: | 65 ns |
NVF2955T1G相关文档
- Simulation Model: Spice 3 Model
- Simulation Model: Saber Model
- Package Drawing: SOT-223 (TO-261) 4 LEAD
- Simulation Model: Spice 2 Model
- Simulation Model: P Spice Model
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