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NTJD4158CT1G的详细信息
Manufacturer: | ON Semiconductor |
---|---|
Product Category: | MOSFET |
RoHS: | Yes |
Brand: | ON Semiconductor |
Transistor Polarity: | N and P-Channel |
Vds - Drain-Source Breakdown Voltage: | 30 V, - 20 V |
Vgs - Gate-Source Breakdown Voltage: | 20 V, 12 V |
Id - Continuous Drain Current: | 250 mA |
Rds On - Drain-Source Resistance: | 1 Ohms |
Configuration: | Dual |
Qg - Gate Charge: | 0.9 nC, 2.2 nC |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 270 mW |
Mounting Style: | SMD/SMT |
Package / Case: | SC-70-6 |
Packaging: | Reel |
Channel Mode: | Enhancement |
Fall Time: | 78 nS, 3.5 nS |
Forward Transconductance - Min: | 0.08 S, 3 S |
Minimum Operating Temperature: | - 55 C |
Rise Time: | 66 nS, 6.5 nS |
Series: | NTJD4158C |
Factory Pack Quantity: | 3000 |
Typical Turn-Off Delay Time: | 56 nS, 13.5 nS |
NTJD4158CT1G相关文档
- Simulation Model: NTJD4158C Saber Model
- Simulation Model: NTJD4185C Spice 3 Model
- Simulation Model: NTJD4185C P Spice Model
- Package Drawing: SC−88/SC70−6/SOT−363 6 LEAD
- Simulation Model: NTJD4185C Spice 2 Model
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