型号: | NTHC5513T1G |
厂商: |
ON Semiconductor |
标准: | |
分类: | 半导体 , 分离式半导体 |
描述: | mosfet 20v +3.9A/-3A complementary |
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Datasheet下载地址
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NTHC5513T1G的详细信息
Manufacturer: | ON Semiconductor |
---|---|
Product Category: | MOSFET |
RoHS: | Yes |
Brand: | ON Semiconductor |
Transistor Polarity: | N and P-Channel |
Vds - Drain-Source Breakdown Voltage: | 20 V |
Vgs - Gate-Source Breakdown Voltage: | 12 V |
Id - Continuous Drain Current: | 3.9 A |
Rds On - Drain-Source Resistance: | 80 mOhms, 155 mOhms |
Configuration: | Complementary |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 1.1 W |
Mounting Style: | SMD/SMT |
Package / Case: | 1206-8 ChipFET |
Packaging: | Reel |
Channel Mode: | Enhancement |
Fall Time: | 3 ns, 27 ns |
Forward Transconductance - Min: | 6 S |
Minimum Operating Temperature: | - 55 C |
Rise Time: | 9 ns, 13 ns |
Series: | NTHC5513 |
Factory Pack Quantity: | 3000 |
Typical Turn-Off Delay Time: | 10 ns, 33 ns |
NTHC5513T1G相关文档
- Simulation Model: Saber model
- Application Note: Dual-Channel 1206A ChipFET Power MOSFET Recommended Pad Patternand Thermal Performance
- Simulation Model: Spice 2 model
- Simulation Model: PSpice model
- Package Drawing: ChipFET¿
- Simulation Model: Spice 3 model
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