Image NTHC5513T1G
型号:

NTHC5513T1G

厂商: ON Semiconductor ON Semiconductor
标准:
分类: 半导体分离式半导体
描述: mosfet 20v +3.9A/-3A complementary
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NTHC5513T1G的详细信息

Manufacturer: ON Semiconductor
Product Category: MOSFET
RoHS: Yes
Brand: ON Semiconductor
Transistor Polarity: N and P-Channel
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs - Gate-Source Breakdown Voltage: 12 V
Id - Continuous Drain Current: 3.9 A
Rds On - Drain-Source Resistance: 80 mOhms, 155 mOhms
Configuration: Complementary
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 1.1 W
Mounting Style: SMD/SMT
Package / Case: 1206-8 ChipFET
Packaging: Reel
Channel Mode: Enhancement
Fall Time: 3 ns, 27 ns
Forward Transconductance - Min: 6 S
Minimum Operating Temperature: - 55 C
Rise Time: 9 ns, 13 ns
Series: NTHC5513
Factory Pack Quantity: 3000
Typical Turn-Off Delay Time: 10 ns, 33 ns

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