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NTGD4167CT1G的详细信息
Manufacturer: | ON Semiconductor |
---|---|
Product Category: | MOSFET |
RoHS: | Yes |
Brand: | ON Semiconductor |
Transistor Polarity: | N and P-Channel |
Vds - Drain-Source Breakdown Voltage: | 30 V |
Vgs - Gate-Source Breakdown Voltage: | 12 V |
Id - Continuous Drain Current: | 2.2 A |
Rds On - Drain-Source Resistance: | 90 mOhms, 170 mOhms |
Configuration: | Complementary |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 1.1 W |
Mounting Style: | SMD/SMT |
Package / Case: | TSOP-6 |
Packaging: | Reel |
Channel Mode: | Enhancement |
Fall Time: | 4 ns, 8 ns |
Minimum Operating Temperature: | - 55 C |
Rise Time: | 4 ns, 8 ns |
Series: | NTGD4167C |
Factory Pack Quantity: | 3000 |
Typical Turn-Off Delay Time: | 14 ns, 22 ns |
NTGD4167CT1G相关文档
- Simulation Model: Spice3 Model
- Package Drawing: TSOP-6
- Simulation Model: Spice2 Model
- Simulation Model: Saber Model
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