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ON Semiconductor 
NTD5805NT4G的详细信息
| Manufacturer： | ON Semiconductor |
|---|---|
| Product Category： | MOSFET |
| RoHS： | Yes |
| Transistor Polarity： | N-Channel |
| Vds - Drain-Source Breakdown Voltage： | 40 V |
| Vgs - Gate-Source Breakdown Voltage： | 20 V |
| Id - Continuous Drain Current： | 51 A |
| Rds On - Drain-Source Resistance： | 7.6 mOhms |
| Configuration： | Single |
| Qg - Gate Charge： | 33 nC |
| Maximum Operating Temperature： | + 175 C |
| Pd - Power Dissipation： | 47 W |
| Mounting Style： | SMD/SMT |
| Package / Case： | DPAK-2 |
| Packaging： | Reel |
| Brand： | ON Semiconductor |
| Fall Time： | 4.5 ns |
| Forward Transconductance - Min： | 8.54 S |
| Minimum Operating Temperature： | - 55 C |
| Rise Time： | 17.9 ns |
| Series： | NTD5805N |
| Factory Pack Quantity： | 2500 |
NTD5805NT4G相关文档
- Simulation Model: Spice3 Model
- Simulation Model: PSpice Model
- Simulation Model: Saber Model
- Simulation Model: Spice2 Model
- Application Note: MOSFET Gate-Charge Origin and its Applications
- PCN: Final Product / Process Change Notification
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