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NTD4863NAT4G的详细信息
Manufacturer: | ON Semiconductor |
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Product Category: | MOSFET |
RoHS: | Yes |
Brand: | ON Semiconductor |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 25 V |
Vgs - Gate-Source Breakdown Voltage: | 20 V |
Id - Continuous Drain Current: | 11.3 A |
Rds On - Drain-Source Resistance: | 9.3 mOhms |
Configuration: | Single |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 1.95 W |
Mounting Style: | SMD/SMT |
Package / Case: | DPAK-2 |
Packaging: | Reel |
Channel Mode: | Enhancement |
Fall Time: | 19.7 ns, 16.5 ns |
Minimum Operating Temperature: | - 55 C |
Rise Time: | 19.7 ns, 16.5 ns |
Factory Pack Quantity: | 2500 |
Typical Turn-Off Delay Time: | 13.5 ns, 20.2 ns |
NTD4863NAT4G相关文档
- Application Note: Description of the ON Semiconductor MOSFET Model
- Package Drawing: 3.5 mm IPAK, Straight Lead
- Package Drawing: DPAK 4 LEAD Single Gauge Surface Mount
- Simulation Model: Spice2 Model
- Simulation Model: Spice3 Model
- Simulation Model: PSpice Model
- Package Drawing: IPAK (DPAK−3 Insertion Mount)
- Simulation Model: Saber Model
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