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NTB60N06T4G的详细信息
Manufacturer: | ON Semiconductor |
---|---|
Product Category: | MOSFET |
RoHS: | Yes |
Brand: | ON Semiconductor |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 60 V |
Vgs - Gate-Source Breakdown Voltage: | 20 V |
Id - Continuous Drain Current: | 60 A |
Rds On - Drain-Source Resistance: | 14 mOhms |
Configuration: | Single |
Maximum Operating Temperature: | + 175 C |
Pd - Power Dissipation: | 150 W |
Mounting Style: | SMD/SMT |
Package / Case: | D2PAK-2 |
Packaging: | Reel |
Channel Mode: | Enhancement |
Fall Time: | 142.5 ns |
Forward Transconductance - Min: | 35 S |
Minimum Operating Temperature: | - 55 C |
Rise Time: | 180.7 ns |
Series: | NTB60N06 |
Factory Pack Quantity: | 800 |
Typical Turn-Off Delay Time: | 94.5 ns |
NTB60N06T4G相关文档
- Simulation Model: LIB Model For NTP60N06
- Simulation Model: SP2 Model For NTP60N06
- Package Drawing: D2PAK 3 LEAD
- Simulation Model: SP3 Model For NTP60N06
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