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NSBA113EDXV6T1的详细信息

Datasheets:
NSBA114EDXV6T1,5 Series:
Product Photos:
SOT-563-6_463A:
PCN Obsolescence/ EOL:
Multiple Devices 01/Jul/2005:
Standard Package : 4,000
Category: Discrete Semiconductor Products
Family: Transistors (BJT) - Arrays, Pre-Biased
Series: -
Packaging : Tape & Reel (TR)
Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 1k
Resistor - Emitter Base (R2) (Ohms): 1k
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 500mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563
Other Names: NSBA113EDXV6T1OS