型号:

NP180N055TUJ-E1-AY

厂商: Renesas Electronics America
标准:
分类: 半导体FET - 单
描述: mosfet N-CH 55v 180a TO-263-7
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NP180N055TUJ-E1-AY的详细信息

Datasheets:
NP180N055TUJ:
PCN Assembly/Origin:
Wafer Fabrication Site Change 10/Oct/2013:
Standard Package : 1
Category: Discrete Semiconductor Products
Family: FETs - Single
Series: -
Packaging : Cut Tape (CT)
FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 90A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) @ Vgs: 230nC @ 10V
Input Capacitance (Ciss) @ Vds: 14250pF @ 25V
Power - Max: 1.8W
Mounting Type: Surface Mount
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Supplier Device Package: TO-263-7
Other Names: NP180N055TUJ-E1-AYCTNP180N055TUJE1AY