首页 > NJR > 半导体 > 射频半导体 > NJG1116BHB3-TE1
型号:

NJG1116BHB3-TE1

厂商: NJR
标准:
分类: 半导体射频半导体
描述: RF amplifier 2.1ghz lna gaas mmic
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NJG1116BHB3-TE1的详细信息

Manufacturer: NJR
Product Category: RF Amplifier
RoHS: Yes
Brand: NJR
Type: General Purpose Amplifier
Operating Frequency: 2.1 GHz
Power Gain Typ: 14.4 dB
Noise Figure: 1.5 dB
Output Intercept Point: 3 dBm
Supply Current: 2.7 mA
Maximum Operating Temperature: + 85 C
Mounting Style: SMD/SMT
Packaging: Reel
Maximum Power Dissipation: 135 mW
Minimum Operating Temperature: - 40 C
Number of Channels: 1 Channel
Series: NJG1116
Factory Pack Quantity: 3000
Tradename: NJG111