首页 > NJR > 半导体 > 射频半导体 > NJG1112PB1-TE1
型号:

NJG1112PB1-TE1

厂商: NJR
标准:
分类: 半导体射频半导体
描述: RF amplifier pdc dual band lna
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NJG1112PB1-TE1的详细信息

Manufacturer: NJR
Product Category: RF Amplifier
RoHS: Yes
Brand: NJR
Type: General Purpose Amplifier
Operating Frequency: 800 MHz to 1.5 GHz
Power Gain Typ: 18.5 dB
Noise Figure: 1.6 dB
Supply Current: 3.5 mA
Maximum Operating Temperature: + 85 C
Mounting Style: SMD/SMT
Packaging: Reel
Isolation dB: 25 dB
Maximum Power Dissipation: 300 mW
Minimum Operating Temperature: - 40 C
Number of Channels: 2 Channel
Series: NJG1112
Factory Pack Quantity: 4000
Tradename: NJG111