首页 > NJR > 半导体 > 射频半导体 > NJG1110PB1-TE1
型号:

NJG1110PB1-TE1

厂商: NJR
标准:
分类: 半导体射频半导体
描述: RF amplifier dual low noise amp pdc dual lna
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NJG1110PB1-TE1的详细信息

Manufacturer: NJR
Product Category: RF Amplifier
RoHS: Yes
Brand: NJR
Type: General Purpose Amplifier
Operating Frequency: 800 MHz to 1.5 GHz
Power Gain Typ: 18 dB
Noise Figure: 1.2 dB
Output Intercept Point: 13 dBm
Supply Current: 3.25 mA
Test Frequency: 870 MHz
Maximum Operating Temperature: + 85 C
Mounting Style: SMD/SMT
Packaging: Reel
Isolation dB: 40 dB
Minimum Operating Temperature: - 40 C
Number of Channels: 2 Channel
Series: NJG1110
Factory Pack Quantity: 4000
Tradename: NJG111

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