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ON Semiconductor 
NGTB50N120FL2WG的详细信息
| Manufacturer： | ON Semiconductor |
|---|---|
| Product Category： | IGBT Transistors |
| RoHS： | Yes |
| Configuration： | Single |
| Collector- Emitter Voltage VCEO Max： | 1200 V |
| Collector-Emitter Saturation Voltage： | 2.2 V |
| Maximum Gate Emitter Voltage： | 30 V |
| Continuous Collector Current at 25 C： | 100 A |
| Gate-Emitter Leakage Current： | 200 nA |
| Power Dissipation： | 535 W |
| Maximum Operating Temperature： | + 175 C |
| Package / Case： | TO-247 |
| Packaging： | Tube |
| Brand： | ON Semiconductor |
| Minimum Operating Temperature： | - 55 C |
| Mounting Style： | Through Hole |
| Series： | NGTB50N120FL2 |
| Factory Pack Quantity： | 30 |
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