ON Semiconductor 
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NDD03N60ZT4G的详细信息
| Manufacturer： | ON Semiconductor |
|---|---|
| Product Category： | MOSFET |
| RoHS： | Yes |
| Transistor Polarity： | N-Channel |
| Vds - Drain-Source Breakdown Voltage： | 600 V |
| Vgs - Gate-Source Breakdown Voltage： | 30 V |
| Id - Continuous Drain Current： | 2.6 A |
| Rds On - Drain-Source Resistance： | 3.3 Ohms |
| Configuration： | Single |
| Vgs th - Gate-Source Threshold Voltage： | 4.5 V |
| Qg - Gate Charge： | 12 nC |
| Maximum Operating Temperature： | + 125 C |
| Pd - Power Dissipation： | 61 W |
| Mounting Style： | SMD/SMT |
| Package / Case： | DPAK-2 |
| Packaging： | Reel |
| Brand： | ON Semiconductor |
| Forward Transconductance - Min： | 2 S |
| Minimum Operating Temperature： | - 55 C |
| Factory Pack Quantity： | 2500 |
NDD03N60ZT4G相关文档
- Package Drawing: IPAK (DPAK−3 Insertion Mount)
- Simulation Model: NDD03N60Z Saber Model
- Package Drawing: DPAK 4 LEAD Single Gauge Surface Mount
- Simulation Model: NDD03N60Z PSpice Model
- Simulation Model: NDD03N60Z Spice2 Model
- PCN: Final Product / Process Change Notification
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