Image MUN2211JT1
型号:

MUN2211JT1

厂商: ON Semiconductor ON Semiconductor
分类: 半导体晶体管(BJT) - 单路﹐预偏压式
描述: trans prebias npn 2.7W sc59
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MUN2211JT1的详细信息

Product Photos:
SOT-23-3:
PCN Obsolescence/ EOL:
Multiple Devices 30/Jun/2006:
Standard Package : 3,000
Category: Discrete Semiconductor Products
Family: Transistors (BJT) - Single, Pre-Biased
Series: -
Packaging : Tape & Reel (TR)
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 230mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SC-59