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MRFG35003N6AT1的详细信息
Manufacturer: | Freescale Semiconductor |
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Product Category: | Transistors RF JFET |
RoHS: | Yes |
Brand: | Freescale Semiconductor |
Type: | GaAs pHEMT |
Vds - Drain-Source Breakdown Voltage: | 8 V |
Vgs - Gate-Source Breakdown Voltage: | - 5 V |
Id - Continuous Drain Current: | 2.9 A |
Frequency: | 3.55 GHz |
Gain: | 10 dB |
Maximum Operating Temperature: | + 85 C |
Mounting Style: | SMD/SMT |
Package / Case: | PLD-1.5 |
Packaging: | Reel |
Configuration: | Single Dual Source |
P1dB: | 3 W |
Product: | RF JFET |
Series: | MRFG35003N6AT1 |
Factory Pack Quantity: | 1000 |
Unit Weight: | 280 mg |
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