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MMSF3P02HDR2G的详细信息
Manufacturer: | ON Semiconductor |
---|---|
Product Category: | MOSFET |
RoHS: | Yes |
Brand: | ON Semiconductor |
Transistor Polarity: | P-Channel |
Vds - Drain-Source Breakdown Voltage: | - 20 V |
Vgs - Gate-Source Breakdown Voltage: | 20 V |
Id - Continuous Drain Current: | 5.6 A |
Rds On - Drain-Source Resistance: | 75 mOhms |
Configuration: | Single Quad Drain Dual Source |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 2.5 W |
Mounting Style: | SMD/SMT |
Package / Case: | SOIC-8 Narrow |
Packaging: | Reel |
Channel Mode: | Enhancement |
Fall Time: | 84 ns, 97 ns |
Forward Transconductance - Min: | 7.2 S |
Minimum Operating Temperature: | - 55 C |
Rise Time: | 135 ns, 40 ns |
Series: | MMSF3P02HD |
Factory Pack Quantity: | 2500 |
Typical Turn-Off Delay Time: | 54 ns, 110 ns |
MMSF3P02HDR2G相关文档
- Application Note: HDTMOS Power MOSFETs Excel in Synchronous Rectifier Applications
- Application Note: Using PSPICE to Analyze Performance of Power MOSFETs In Step-Down, Switching Regulators Employing Sychronous Rectification
- Package Drawing: SOIC-8 Narrow Body
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