Image IXTH140P10T
型号:

IXTH140P10T

厂商: IXYS IXYS
标准:
分类: 半导体分离式半导体
描述: mosfet trenchp channel power mosfets
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IXTH140P10T的详细信息

Manufacturer: IXYS
Product Category: MOSFET
RoHS: Yes
Transistor Polarity: P-Channel
Vds - Drain-Source Breakdown Voltage: - 100 V
Vgs - Gate-Source Breakdown Voltage: 15 V
Id - Continuous Drain Current: - 140 A
Rds On - Drain-Source Resistance: 10 mOhms
Configuration: Single
Vgs th - Gate-Source Threshold Voltage: - 2 V to - 4 V
Qg - Gate Charge: 400 nC
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 568 W
Mounting Style: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Brand: IXYS
Channel Mode: Enhancement
Fall Time: 26 ns
Forward Transconductance - Min: 115 S
Minimum Operating Temperature: - 55 C
Rise Time: 26 ns
Series: IXTH140P10
Factory Pack Quantity: 30
Typical Turn-Off Delay Time: 86 ns