Datasheet下载地址
本地下载 >> 厂商下载2 >> 第三方平台下载 >> |
IXTA220N04T2-7的详细信息
Manufacturer: | IXYS |
---|---|
Product Category: | MOSFET |
RoHS: | Yes |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 40 V |
Vgs - Gate-Source Breakdown Voltage: | 20 V |
Id - Continuous Drain Current: | 220 A |
Rds On - Drain-Source Resistance: | 2.8 mOhms |
Configuration: | Single Quint Source |
Vgs th - Gate-Source Threshold Voltage: | 4 V |
Qg - Gate Charge: | 112 nC |
Maximum Operating Temperature: | + 175 C |
Pd - Power Dissipation: | 360 W |
Mounting Style: | SMD/SMT |
Package / Case: | D2PAK-6 |
Packaging: | Tube |
Brand: | IXYS |
Channel Mode: | Enhancement |
Fall Time: | 21 ns |
Forward Transconductance - Min: | 40 S |
Minimum Operating Temperature: | - 55 C |
Rise Time: | 21 ns |
Series: | IXTA220N04 |
Factory Pack Quantity: | 50 |
Tradename: | TrenchT2 |
Typical Turn-Off Delay Time: | 31 ns |
Unit Weight: | 1.600 g |
扫码手机查看更方便
同类器件