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IXFX80N50Q3的详细信息
Manufacturer: | IXYS |
---|---|
Product Category: | MOSFET |
RoHS: | Yes |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 500 V |
Vgs - Gate-Source Breakdown Voltage: | 30 V |
Id - Continuous Drain Current: | 80 A |
Rds On - Drain-Source Resistance: | 65 mOhms |
Configuration: | Single |
Qg - Gate Charge: | 200 nC |
Pd - Power Dissipation: | 1.25 kW |
Mounting Style: | Through Hole |
Package / Case: | PLUS 247-3 |
Packaging: | Tube |
Brand: | IXYS |
Rise Time: | 250 ns |
Series: | IXFX80N50 |
Factory Pack Quantity: | 30 |
Tradename: | HiPerFET |
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