Image IXFH26N50P3
型号:

IXFH26N50P3

厂商: IXYS IXYS
标准:
分类: 半导体分离式半导体
描述: mosfet polar3 hiperfet power mosfet
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IXFH26N50P3的详细信息

Manufacturer: IXYS
Product Category: MOSFET
RoHS: Yes
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 500 V
Vgs - Gate-Source Breakdown Voltage: 30 V
Id - Continuous Drain Current: 26 A
Rds On - Drain-Source Resistance: 240 mOhms
Vgs th - Gate-Source Threshold Voltage: 5 V
Qg - Gate Charge: 42 nC
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 500 W
Mounting Style: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Brand: IXYS
Channel Mode: Enhancement
Fall Time: 5 ns
Forward Transconductance - Min: 14 S
Minimum Operating Temperature: - 55 C
Rise Time: 7 ns
Series: IXFH26N50
Factory Pack Quantity: 30
Tradename: Polar3, HiPerFET
Typical Turn-Off Delay Time: 38 ns