IXFH26N50P3的详细信息
Manufacturer: | IXYS |
---|---|
Product Category: | MOSFET |
RoHS: | Yes |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 500 V |
Vgs - Gate-Source Breakdown Voltage: | 30 V |
Id - Continuous Drain Current: | 26 A |
Rds On - Drain-Source Resistance: | 240 mOhms |
Vgs th - Gate-Source Threshold Voltage: | 5 V |
Qg - Gate Charge: | 42 nC |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 500 W |
Mounting Style: | Through Hole |
Package / Case: | TO-247-3 |
Packaging: | Tube |
Brand: | IXYS |
Channel Mode: | Enhancement |
Fall Time: | 5 ns |
Forward Transconductance - Min: | 14 S |
Minimum Operating Temperature: | - 55 C |
Rise Time: | 7 ns |
Series: | IXFH26N50 |
Factory Pack Quantity: | 30 |
Tradename: | Polar3, HiPerFET |
Typical Turn-Off Delay Time: | 38 ns |
扫码手机查看更方便
同类器件