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IXFH22N60P3的详细信息
Manufacturer: | IXYS |
---|---|
Product Category: | MOSFET |
RoHS: | Yes |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 600 V |
Vgs - Gate-Source Breakdown Voltage: | 30 V |
Id - Continuous Drain Current: | 22 A |
Rds On - Drain-Source Resistance: | 360 mOhms |
Configuration: | Single |
Vgs th - Gate-Source Threshold Voltage: | 5 V |
Qg - Gate Charge: | 38 nC |
Pd - Power Dissipation: | 500 W |
Mounting Style: | Through Hole |
Package / Case: | TO-247-3 |
Packaging: | Tube |
Brand: | IXYS |
Fall Time: | 19 ns |
Forward Transconductance - Min: | 24 S, 14 S |
Rise Time: | 17 ns |
Series: | IXFH22N60 |
Factory Pack Quantity: | 30 |
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