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IRG7PH50K10D-EPBF的详细信息
Datasheets: | |
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IRG7PH50K10D(-E)PbF: | |
PCN Assembly/Origin: | |
IGBT Backend Wafer Processing 23/Oct/2013: | |
IGBT Wafer Fab Change 08/Nov/2013: | |
Standard Package : | 25 |
Category: | Discrete Semiconductor Products |
Family: | IGBTs - Single |
Series: | - |
Packaging : | Tube |
IGBT Type: | - |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 90A |
Current - Collector Pulsed (Icm): | 160A |
Vce(on) (Max) @ Vge, Ic: | 2.4V @ 15V, 35A |
Power - Max: | 400W |
Switching Energy: | 2.3mJ (on), 1.6mJ (off) |
Input Type: | Standard |
Gate Charge: | 300nC |
Td (on/off) @ 25°C: | 90ns/340ns |
Test Condition: | 600V, 35A, 5 Ohm, 15V |
Reverse Recovery Time (trr): | 130ns |
Package / Case: | TO-247-3 |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247AD |
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