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IRFSL59N10D的详细信息
Datasheets: | |
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IRFB59N10D, IRFS(L)59N10D : | |
Standard Package : | 50 |
Category: | Discrete Semiconductor Products |
Family: | FETs - Single |
Series: | HEXFET® |
Packaging : | Tube |
FET Type: | MOSFET N-Channel, Metal Oxide |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 59A (Tc) |
Rds On (Max) @ Id, Vgs: | 25 mOhm @ 35.4A, 10V |
Vgs(th) (Max) @ Id: | 5.5V @ 250µA |
Gate Charge (Qg) @ Vgs: | 114nC @ 10V |
Input Capacitance (Ciss) @ Vds: | 2450pF @ 25V |
Power - Max: | 3.8W |
Mounting Type: | Through Hole |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | TO-262 |
Other Names: | *IRFSL59N10D |
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