IRFH5110TR2PBF的详细信息
Datasheets: | |
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IRFH5110PBF: | |
Product Photos: | |
IRFH5250TR2PBF: | |
Design Resources: | |
IRFH5110TR2PBF Saber Model: | |
IRFH5110TR2PBF Spice Model: | |
Featured Product: | |
Mid-Voltage Power MOSFETs: | |
PCN Obsolescence/ EOL: | |
Multiple Devices 13/Nov/2013: | |
PCN Assembly/Origin: | |
Mosfet Backend Wafer Processing 23/Oct/2013: | |
Standard Package : | 1 |
Category: | Discrete Semiconductor Products |
Family: | FETs - Single |
Series: | HEXFET® |
Packaging : | Cut Tape (CT) |
FET Type: | MOSFET N-Channel, Metal Oxide |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Ta), 63A (Tc) |
Rds On (Max) @ Id, Vgs: | 12.4 mOhm @ 37A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 100µA |
Gate Charge (Qg) @ Vgs: | 72nC @ 10V |
Input Capacitance (Ciss) @ Vds: | 3152pF @ 25V |
Power - Max: | 3.6W |
Mounting Type: | Surface Mount |
Package / Case: | 8-PowerVQFN |
Supplier Device Package: | PQFN (5x6) |
Other Names: | IRFH5110TR2PBFCT |
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