Image IRFH5110TR2PBF
型号:

IRFH5110TR2PBF

厂商: International Rectifier International Rectifier
标准:
分类: 半导体FET - 单
描述: mosfet N-CH 100v 5x6 pqfn
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IRFH5110TR2PBF的详细信息

Datasheets:
IRFH5110PBF:
Product Photos:
IRFH5250TR2PBF:
Design Resources:
IRFH5110TR2PBF Saber Model:
IRFH5110TR2PBF Spice Model:
Featured Product:
Mid-Voltage Power MOSFETs:
PCN Obsolescence/ EOL:
Multiple Devices 13/Nov/2013:
PCN Assembly/Origin:
Mosfet Backend Wafer Processing 23/Oct/2013:
Standard Package : 1
Category: Discrete Semiconductor Products
Family: FETs - Single
Series: HEXFET®
Packaging : Cut Tape (CT)
FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs: 12.4 mOhm @ 37A, 10V
Vgs(th) (Max) @ Id: 4V @ 100µA
Gate Charge (Qg) @ Vgs: 72nC @ 10V
Input Capacitance (Ciss) @ Vds: 3152pF @ 25V
Power - Max: 3.6W
Mounting Type: Surface Mount
Package / Case: 8-PowerVQFN
Supplier Device Package: PQFN (5x6)
Other Names: IRFH5110TR2PBFCT