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IRF6674TR1PBF的详细信息
Manufacturer: | International Rectifier |
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Product Category: | MOSFET |
RoHS: | Yes |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 60 V |
Vgs - Gate-Source Breakdown Voltage: | 20 V |
Id - Continuous Drain Current: | 67 A |
Rds On - Drain-Source Resistance: | 9 mOhms |
Configuration: | Dual |
Vgs th - Gate-Source Threshold Voltage: | 4.9 V |
Qg - Gate Charge: | 24 nC |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 89 W |
Mounting Style: | SMD/SMT |
Package / Case: | DirectFET-7 MZ |
Packaging: | Reel |
Brand: | International Rectifier |
Fall Time: | 8.7 ns |
Forward Transconductance - Min: | 16 S |
Rise Time: | 12 ns |
Factory Pack Quantity: | 1000 |
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