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IRF640的详细信息
Manufacturer: | Vishay |
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Product Category: | MOSFET |
RoHS: | No |
Brand: | Vishay / Siliconix |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 200 V |
Vgs - Gate-Source Breakdown Voltage: | 20 V |
Id - Continuous Drain Current: | 18 A |
Rds On - Drain-Source Resistance: | 180 mOhms |
Configuration: | Single |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 125 W |
Mounting Style: | Through Hole |
Package / Case: | TO-220-3 |
Packaging: | Tube |
Channel Mode: | Enhancement |
Fall Time: | 36 ns |
Minimum Operating Temperature: | - 55 C |
Rise Time: | 51 ns |
Factory Pack Quantity: | 50 |
Typical Turn-Off Delay Time: | 45 ns |
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