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IRF1010EZSPBF的详细信息
Manufacturer: | International Rectifier |
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Product Category: | MOSFET |
RoHS: | Yes |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 60 V |
Vgs - Gate-Source Breakdown Voltage: | 20 V |
Id - Continuous Drain Current: | 84 A |
Rds On - Drain-Source Resistance: | 8.5 mOhms |
Configuration: | Single |
Vgs th - Gate-Source Threshold Voltage: | 2 V to 4 V |
Qg - Gate Charge: | 58 nC |
Maximum Operating Temperature: | + 175 C |
Pd - Power Dissipation: | 140 W |
Mounting Style: | SMD/SMT |
Package / Case: | D2PAK-2 |
Packaging: | Tube |
Brand: | International Rectifier |
Channel Mode: | Enhancement |
Fall Time: | 54 ns |
Forward Transconductance - Min: | 200 S |
Minimum Operating Temperature: | - 55 C |
Rise Time: | 90 ns |
Factory Pack Quantity: | 800 |
Typical Turn-Off Delay Time: | 38 ns |
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