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IPW65R110CFD的详细信息
Manufacturer: | Infineon |
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Product Category: | MOSFET |
RoHS: | Yes |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 700 V |
Vgs - Gate-Source Breakdown Voltage: | 20 V |
Id - Continuous Drain Current: | 31.2 A |
Rds On - Drain-Source Resistance: | 110 mOhms |
Configuration: | Single |
Qg - Gate Charge: | 118 nC |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 277.8 W |
Mounting Style: | Through Hole |
Package / Case: | TO-247-3 |
Packaging: | Tube |
Brand: | Infineon Technologies |
Fall Time: | 6 nS |
Minimum Operating Temperature: | - 55 C |
Rise Time: | 11 nS |
Series: | IPW65R110 |
Factory Pack Quantity: | 240 |
Tradename: | CoolMOS |
Typical Turn-Off Delay Time: | 68 nS |
Part # Aliases: | IPW65R110CFDFKSA1 SP000895232 |
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