 |
Infineon Technologies 
IPT020N10N3ATMA1的详细信息
| Datasheets： | |
|---|---|
| IPT020N10N3 Preliminary： | |
| Product Photos： | |
| IPT020N10N3ATMA1： | |
| Standard Package ： | 2,000 |
| Category： | Discrete Semiconductor Products |
| Family： | FETs - Single |
| Series： | OptiMOS™ |
| Packaging ： | Tape & Reel (TR) |
| FET Type： | MOSFET N-Channel, Metal Oxide |
| FET Feature： | Standard |
| Drain to Source Voltage (Vdss)： | 100V |
| Current - Continuous Drain (Id) @ 25°C： | 300A (Tc) |
| Rds On (Max) @ Id, Vgs： | 2 mOhm @ 150A, 10V |
| Vgs(th) (Max) @ Id： | 3.5V @ 272µA |
| Gate Charge (Qg) @ Vgs： | 156nC @ 10V |
| Input Capacitance (Ciss) @ Vds： | 11200pF @ 50V |
| Power - Max： | 375W |
| Mounting Type： | Surface Mount |
| Package / Case： | 8-PowerSFN |
| Supplier Device Package： | PG-HSOF-8-1 |
| Dynamic Catalog： | N-Channel Standard FETs |
| Other Names： | IPT020N10N3IPT020N10N3ATMA1TRSP001100160 |
扫码手机查看更方便
同类器件
