Image IPT007N06NATMA1
型号:

IPT007N06NATMA1

厂商: Infineon Technologies Infineon Technologies
标准:
分类: 半导体FET - 单
描述: mosfet N-CH 60v 300a 8hsof
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IPT007N06NATMA1的详细信息

Datasheets:
IPT007N06N:
Product Photos:
IPT007N06NATMA1:
Standard Package : 2,000
Category: Discrete Semiconductor Products
Family: FETs - Single
Series: OptiMOS™
Packaging : Tape & Reel (TR)
FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.75 mOhm @ 150A, 10V
Vgs(th) (Max) @ Id: 3.3V @ 280µA
Gate Charge (Qg) @ Vgs: 216nC @ 10V
Input Capacitance (Ciss) @ Vds: 16000pF @ 30V
Power - Max: 375W
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Supplier Device Package: PG-HSOF-8-1
Dynamic Catalog: N-Channel Logic Level Gate FETs
Other Names: IPT007N06NIPT007N06NATMA1TRSP001100158