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Infineon Technologies 
IPP048N06L G的详细信息
| Datasheets： | |
|---|---|
| IPB,IPP048N06L G： | |
| Product Photos： | |
| TO-220-3： | |
| PCN Obsolescence/ EOL： | |
| Multiple Devices 11/Dec/2009： | |
| Standard Package ： | 50 |
| Category： | Discrete Semiconductor Products |
| Family： | FETs - Single |
| Series： | OptiMOS™ |
| Packaging ： | Tube |
| FET Type： | MOSFET N-Channel, Metal Oxide |
| FET Feature： | Logic Level Gate |
| Drain to Source Voltage (Vdss)： | 60V |
| Current - Continuous Drain (Id) @ 25°C： | 100A (Tc) |
| Rds On (Max) @ Id, Vgs： | 4.7 mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id： | 2V @ 270µA |
| Gate Charge (Qg) @ Vgs： | 225nC @ 10V |
| Input Capacitance (Ciss) @ Vds： | 7600pF @ 30V |
| Power - Max： | 300W |
| Mounting Type： | Through Hole |
| Package / Case： | TO-220-3 |
| Supplier Device Package： | PG-TO220-3 |
| Other Names： | IPP048N06L G-NDIPP048N06LGINIPP048N06LGXIPP048N06LGXKSP000204180 |
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