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Infineon Technologies 
IPP020N06N的详细信息
| Datasheets： | |
|---|---|
| IPP020N06N： | |
| Product Photos： | |
| TO-220-3： | |
| Standard Package ： | 500 |
| Category： | Discrete Semiconductor Products |
| Family： | FETs - Single |
| Series： | OptiMOS™ |
| Packaging ： | Tube |
| FET Type： | MOSFET N-Channel, Metal Oxide |
| FET Feature： | Logic Level Gate |
| Drain to Source Voltage (Vdss)： | 60V |
| Current - Continuous Drain (Id) @ 25°C： | 29A (Ta), 120A (Tc) |
| Rds On (Max) @ Id, Vgs： | 2 mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id： | 2.8V @ 143µA |
| Gate Charge (Qg) @ Vgs： | 106nC @ 10V |
| Input Capacitance (Ciss) @ Vds： | 7800pF @ 30V |
| Power - Max： | 3W |
| Mounting Type： | Through Hole |
| Package / Case： | TO-220-3 |
| Supplier Device Package： | TO-220-3 |
| Dynamic Catalog： | N-Channel Logic Level Gate FETs |
| Other Names： | IPP020N06NAKSA1SP000917406 |
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