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IPI65R420CFD的详细信息
Manufacturer: | Infineon |
---|---|
Product Category: | MOSFET |
RoHS: | Yes |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 650 V |
Vgs - Gate-Source Breakdown Voltage: | 30 V |
Id - Continuous Drain Current: | 8.7 A |
Rds On - Drain-Source Resistance: | 420 mOhms |
Configuration: | Single |
Vgs th - Gate-Source Threshold Voltage: | 4 V |
Qg - Gate Charge: | 32 nC |
Pd - Power Dissipation: | 83.3 W |
Mounting Style: | Through Hole |
Package / Case: | I2PAK-3 |
Packaging: | Tube |
Brand: | Infineon Technologies |
Fall Time: | 8 ns |
Rise Time: | 7 ns |
Series: | IPI65R420 |
Factory Pack Quantity: | 500 |
Tradename: | CoolMOS |
Part # Aliases: | IPI65R420CFDXKSA1 SP000891702 |
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