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Infineon Technologies 
IPI120N04S3-02的详细信息
| Manufacturer： | Infineon |
|---|---|
| Product Category： | MOSFET |
| RoHS： | Yes |
| Brand： | Infineon Technologies |
| Transistor Polarity： | N-Channel |
| Vds - Drain-Source Breakdown Voltage： | 40 V |
| Vgs - Gate-Source Breakdown Voltage： | 20 V |
| Id - Continuous Drain Current： | 120 A |
| Rds On - Drain-Source Resistance： | 2.3 mOhms |
| Configuration： | Single |
| Maximum Operating Temperature： | + 175 C |
| Pd - Power Dissipation： | 300 W |
| Mounting Style： | Through Hole |
| Package / Case： | I2PAK-3 |
| Packaging： | Tube |
| Channel Mode： | Enhancement |
| Fall Time： | 18 ns |
| Minimum Operating Temperature： | - 55 C |
| Rise Time： | 19 ns |
| Series： | xPI120N04 |
| Factory Pack Quantity： | 500 |
| Typical Turn-Off Delay Time： | 57 ns |
| Part # Aliases： | IPI120N04S302AKSA1 SP000261225 |
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