Image IPD250N06N3 G
型号:

IPD250N06N3 G

厂商: Infineon Technologies Infineon Technologies
标准:
分类: 半导体FET - 单
描述: mosfet N-CH 60v 28a to252-3
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IPD250N06N3 G的详细信息

Datasheets:
IPD250N06N3 G:
Product Photos:
TO-252-3:
PCN Obsolescence/ EOL:
Multiple Devices 30/Aug/2013:
Standard Package : 2,500
Category: Discrete Semiconductor Products
Family: FETs - Single
Series: OptiMOS™
Packaging : Tape & Reel (TR)
FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 25 mOhm @ 28A, 10V
Vgs(th) (Max) @ Id: 4V @ 11µA
Gate Charge (Qg) @ Vgs: 15nC @ 10V
Input Capacitance (Ciss) @ Vds: 1200pF @ 30V
Power - Max: 36W
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3
Other Names: IPD250N06N3 G-NDIPD250N06N3GIPD250N06N3GBTMA1SP000453634