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Infineon Technologies 
IPD180N10N3 G的详细信息
| Datasheets： | |
|---|---|
| IPD180N10N3 G： | |
| Product Photos： | |
| TO-252-3： | |
| Standard Package ： | 2,500 |
| Category： | Discrete Semiconductor Products |
| Family： | FETs - Single |
| Series： | OptiMOS™ |
| Packaging ： | Tape & Reel (TR) |
| FET Type： | MOSFET N-Channel, Metal Oxide |
| FET Feature： | Standard |
| Drain to Source Voltage (Vdss)： | 100V |
| Current - Continuous Drain (Id) @ 25°C： | 43A (Tc) |
| Rds On (Max) @ Id, Vgs： | 18 mOhm @ 33A, 10V |
| Vgs(th) (Max) @ Id： | 3.5V @ 33µA |
| Gate Charge (Qg) @ Vgs： | 25nC @ 10V |
| Input Capacitance (Ciss) @ Vds： | 1800pF @ 50V |
| Power - Max： | 71W |
| Mounting Type： | Surface Mount |
| Package / Case： | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package： | PG-TO252-3 |
| Dynamic Catalog： | N-Channel Standard FETs |
| Other Names： | IPD180N10N3 G-NDIPD180N10N3GIPD180N10N3GBTMA1SP000482438 |
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