Image IPD053N06N
型号:

IPD053N06N

厂商: Infineon Technologies Infineon Technologies
标准:
分类: 半导体FET - 单
描述: mosfet N-CH 60v 18a to252-3
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IPD053N06N的详细信息

Datasheets:
IPD053N06N:
Product Photos:
TO-252-3:
Standard Package : 2,500
Category: Discrete Semiconductor Products
Family: FETs - Single
Series: OptiMOS™
Packaging : Tape & Reel (TR)
FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 45A, 10V
Vgs(th) (Max) @ Id: 2.8V @ 36µA
Gate Charge (Qg) @ Vgs: 27nC @ 10V
Input Capacitance (Ciss) @ Vds: 2000pF @ 30V
Power - Max: 3W
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-3
Other Names: IPD053N06NATMA1IPD053N06NTRIPD053N06NXTMA1SP000962138