Image IPB80N06S2L-05
型号:

IPB80N06S2L-05

厂商: Infineon Technologies Infineon Technologies
标准:
分类: 半导体分离式半导体
描述: mosfet optimos-T2 pwr trans 55v 80a
报错 收藏

Datasheet下载地址

厂商下载 >> 厂商下载2 >>

IPB80N06S2L-05的详细信息

Manufacturer: Infineon
Product Category: MOSFET
RoHS: Yes
Brand: Infineon Technologies
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 55 V
Vgs - Gate-Source Breakdown Voltage: 20 V
Id - Continuous Drain Current: 80 A
Rds On - Drain-Source Resistance: 4.5 mOhms
Configuration: Single
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 300 W
Mounting Style: SMD/SMT
Package / Case: D2PAK-2
Packaging: Reel
Channel Mode: Enhancement
Fall Time: 90 ns
Minimum Operating Temperature: - 55 C
Rise Time: 93 ns
Series: IPB80N06S2L
Factory Pack Quantity: 1000
Typical Turn-Off Delay Time: 67 ns
Part # Aliases: IPB80N06S2L05ATMA1 SP000219004