IPB80N06S2L-05的详细信息
Manufacturer: | Infineon |
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Product Category: | MOSFET |
RoHS: | Yes |
Brand: | Infineon Technologies |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 55 V |
Vgs - Gate-Source Breakdown Voltage: | 20 V |
Id - Continuous Drain Current: | 80 A |
Rds On - Drain-Source Resistance: | 4.5 mOhms |
Configuration: | Single |
Maximum Operating Temperature: | + 175 C |
Pd - Power Dissipation: | 300 W |
Mounting Style: | SMD/SMT |
Package / Case: | D2PAK-2 |
Packaging: | Reel |
Channel Mode: | Enhancement |
Fall Time: | 90 ns |
Minimum Operating Temperature: | - 55 C |
Rise Time: | 93 ns |
Series: | IPB80N06S2L |
Factory Pack Quantity: | 1000 |
Typical Turn-Off Delay Time: | 67 ns |
Part # Aliases: | IPB80N06S2L05ATMA1 SP000219004 |
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