IPB65R280E6ATMA1的详细信息
Manufacturer: | Infineon |
---|---|
Product Category: | MOSFET |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 700 V |
Vgs - Gate-Source Breakdown Voltage: | 30 V |
Id - Continuous Drain Current: | 13.8 A |
Rds On - Drain-Source Resistance: | 0.28 Ohms |
Configuration: | Single |
Vgs th - Gate-Source Threshold Voltage: | 3 V |
Qg - Gate Charge: | 45 nC |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 104 W |
Mounting Style: | SMD/SMT |
Package / Case: | TO-263-3 |
Packaging: | Reel |
Brand: | Infineon Technologies |
Fall Time: | 9 ns |
Minimum Operating Temperature: | - 55 C |
Rise Time: | 9 ns |
Series: | XPB65R280 |
Factory Pack Quantity: | 1000 |
Typical Turn-Off Delay Time: | 76 ns |
Part # Aliases: | SP000795274 |
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