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IPB65R045C7的详细信息
Manufacturer: | Infineon |
---|---|
Product Category: | MOSFET |
RoHS: | Yes |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 650 V |
Vgs - Gate-Source Breakdown Voltage: | 20 V |
Id - Continuous Drain Current: | 46 A |
Rds On - Drain-Source Resistance: | 45 mOhms |
Configuration: | Single |
Vgs th - Gate-Source Threshold Voltage: | 3 V to 4 V |
Qg - Gate Charge: | 93 nC |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 227 W |
Mounting Style: | SMD/SMT |
Package / Case: | D2PAK-2 |
Packaging: | Reel |
Brand: | Infineon Technologies |
Channel Mode: | Enhancement |
Fall Time: | 7 ns |
Minimum Operating Temperature: | - 55 C |
Rise Time: | 14 ns |
Series: | IPB65R045 |
Factory Pack Quantity: | 1000 |
Tradename: | CoolMOS |
Typical Turn-Off Delay Time: | 82 ns |
Part # Aliases: | IPB65R045C7ATMA1 SP000929420 |
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