Image IPB107N20NA
型号:

IPB107N20NA

厂商: Infineon Technologies Infineon Technologies
标准:
分类: 半导体FET - 单
描述: mosfet N-CH 200v 88a to263-3
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IPB107N20NA的详细信息

Datasheets:
IPx(107,110)N20NA:
Product Photos:
TO-263:
Standard Package : 1,000
Category: Discrete Semiconductor Products
Family: FETs - Single
Series: OptiMOS™
Packaging : Tape & Reel (TR)
FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 10.7 mOhm @ 88A, 10V
Vgs(th) (Max) @ Id: 4V @ 270µA
Gate Charge (Qg) @ Vgs: 87nC @ 10V
Input Capacitance (Ciss) @ Vds: 7100pF @ 100V
Power - Max: 300W
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3
Dynamic Catalog: N-Channel Logic Level Gate FETs
Other Names: IPB107N20NA-NDIPB107N20NAATMA1SP000877674