![]() |
型号: | IKW50N65F5FKSA1 |
厂商: |
|
标准: | ![]() ![]() |
分类: | 半导体 , 分离式半导体 |
描述: | igbt transistors igbt products |
报错 收藏 赞 |
IKW50N65F5FKSA1的详细信息
Manufacturer: | Infineon |
---|---|
Product Category: | IGBT Transistors |
RoHS: | Yes |
Configuration: | Single |
Collector- Emitter Voltage VCEO Max: | 650 V |
Collector-Emitter Saturation Voltage: | 1.6 V |
Maximum Gate Emitter Voltage: | 20 V |
Continuous Collector Current at 25 C: | 80 A |
Gate-Emitter Leakage Current: | 100 nA |
Power Dissipation: | 305 W |
Maximum Operating Temperature: | + 175 C |
Package / Case: | TO-247-3 |
Packaging: | Tube |
Brand: | Infineon Technologies |
Continuous Collector Current Ic Max: | 56 A |
Minimum Operating Temperature: | - 40 C |
Mounting Style: | Through Hole |
Series: | IKW50N65 |
Factory Pack Quantity: | 240 |
IKW50N65F5FKSA1相关文档
- PCN: Information Notices
扫码手机查看更方便
同类器件