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IKW08T120的详细信息
Manufacturer: | Infineon |
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Product Category: | IGBT Transistors |
RoHS: | Yes |
Brand: | Infineon Technologies |
Configuration: | Single |
Collector- Emitter Voltage VCEO Max: | 1200 V |
Collector-Emitter Saturation Voltage: | 2.2 V |
Maximum Gate Emitter Voltage: | +/- 20 V |
Continuous Collector Current at 25 C: | 16 A |
Gate-Emitter Leakage Current: | 100 nA |
Power Dissipation: | 70 W |
Maximum Operating Temperature: | + 150 C |
Package / Case: | TO-247-3 |
Packaging: | Tube |
Continuous Collector Current Ic Max: | 16 A |
Minimum Operating Temperature: | - 40 C |
Mounting Style: | Through Hole |
Series: | IKW08T120 |
Factory Pack Quantity: | 240 |
Part # Aliases: | IKW08T120FKSA1 SP000013885 |
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