Image IHW25N120R2
型号:

IHW25N120R2

厂商: Infineon Technologies Infineon Technologies
标准:
分类: 半导体分离式半导体
描述: igbt transistors reverse conduct igbt 1200v 25a
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IHW25N120R2的详细信息

Manufacturer: Infineon
Product Category: IGBT Transistors
RoHS: Yes
Brand: Infineon Technologies
Configuration: Single
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 1.6 V
Maximum Gate Emitter Voltage: +/- 25 V
Continuous Collector Current at 25 C: 25 A
Power Dissipation: 365 W
Maximum Operating Temperature: + 150 C
Package / Case: TO-247-3
Packaging: Tube
Continuous Collector Current Ic Max: 50 A
Minimum Operating Temperature: - 40 C
Mounting Style: Through Hole
Series: IHW25N120
Factory Pack Quantity: 240
Part # Aliases: IHW25N120R2FKSA1 SP000212016