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型号: | IHW20N120R3 |
厂商: |
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标准: | ![]() ![]() |
分类: | 半导体 , 分离式半导体 |
描述: | igbt transistors IH seriesrev conduct igbt monolithic body |
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Datasheet下载地址
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IHW20N120R3的详细信息
Manufacturer: | Infineon |
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Product Category: | IGBT Transistors |
RoHS: | Yes |
Configuration: | Single |
Collector- Emitter Voltage VCEO Max: | 1200 V |
Collector-Emitter Saturation Voltage: | 1.48 V |
Maximum Gate Emitter Voltage: | 6.4 V |
Continuous Collector Current at 25 C: | 40 A |
Gate-Emitter Leakage Current: | 100 nA |
Power Dissipation: | 310 W |
Maximum Operating Temperature: | + 175 C |
Package / Case: | TO247-3 |
Packaging: | Tube |
Brand: | Infineon Technologies |
Minimum Operating Temperature: | - 40 C |
Mounting Style: | Through Hole |
Series: | IHW20N120 |
Factory Pack Quantity: | 240 |
Part # Aliases: | IHW20N120R3FKSA1 SP000437702 |
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