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型号: | IGW15N120H3 |
厂商: |
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标准: | ![]() ![]() |
分类: | 半导体 , 分离式半导体 |
描述: | igbt transistors igbt products |
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Datasheet下载地址
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IGW15N120H3的详细信息
Manufacturer: | Infineon |
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Product Category: | IGBT Transistors |
RoHS: | Yes |
Brand: | Infineon Technologies |
Collector- Emitter Voltage VCEO Max: | 1200 V |
Collector-Emitter Saturation Voltage: | 2.7 V |
Maximum Gate Emitter Voltage: | +/- 20 V |
Continuous Collector Current at 25 C: | 30 A |
Gate-Emitter Leakage Current: | 600 nA |
Power Dissipation: | 217 W |
Maximum Operating Temperature: | + 150 C |
Package / Case: | TO-247-3 |
Packaging: | Tube |
Minimum Operating Temperature: | - 40 C |
Mounting Style: | Through Hole |
Series: | IGW15N120 |
Factory Pack Quantity: | 240 |
Part # Aliases: | IGW15N120H3FKSA1 SP000674430 |
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