Image IGW15N120H3
型号:

IGW15N120H3

厂商: Infineon Technologies Infineon Technologies
标准:
分类: 半导体分离式半导体
描述: igbt transistors igbt products
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IGW15N120H3的详细信息

Manufacturer: Infineon
Product Category: IGBT Transistors
RoHS: Yes
Brand: Infineon Technologies
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 2.7 V
Maximum Gate Emitter Voltage: +/- 20 V
Continuous Collector Current at 25 C: 30 A
Gate-Emitter Leakage Current: 600 nA
Power Dissipation: 217 W
Maximum Operating Temperature: + 150 C
Package / Case: TO-247-3
Packaging: Tube
Minimum Operating Temperature: - 40 C
Mounting Style: Through Hole
Series: IGW15N120
Factory Pack Quantity: 240
Part # Aliases: IGW15N120H3FKSA1 SP000674430