型号:

HSG1002VE-TL-E

厂商: Renesas Electronics America
标准:
分类: 半导体RF 晶体管 (BJT)
描述: IC amp hbt sige 38ghz mfpak-4
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HSG1002VE-TL-E的详细信息

Standard Package : 10,000
Category: Discrete Semiconductor Products
Family: RF Transistors (BJT)
Series: -
Packaging : Tape & Reel (TR)
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 3.5V
Frequency - Transition: 38GHz
Noise Figure (dB Typ @ f): 0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz
Gain: 8dB ~ 19.5dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 2V
Current - Collector (Ic) (Max): 35mA
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Supplier Device Package: 4-MFPAK